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Structural, optical, and electrical characterization of hot wall epitaxy grown 1-methoxy-8-hydroxy-9,10-anthraquinone films

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3 Author(s)
Mahajan, Aman ; Material Science Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar-143 005, India ; Bedi, R.K. ; Kumar, Subodh

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1-methoxy-8-hydroxy-9,10-anthraquinone compound has been synthesized and its films are grown by the hot wall epitaxy technique onto the glass substrates kept at different temperatures in a vacuum of 10-5Torr. The experimental conditions are optimized to obtain better crystallinity of the films. The films so prepared have been studied for their structural, optical, and electrical properties. Observations reveal that the crystallinity of the films increases with an increase in substrate temperature. Crystallites as large as 3.30 μm are observed in the case of films deposited at 348 K. Analysis of optical absorption measurements on the films indicate that the interband transition energies lies in the range 1.87–2.02 eV. The conduction in these films is found to be ohmic in nature and appears to take place by thermally activated hopping above intermolecular barriers. The electrical resistivity of films decreases with the increase in temperature, while carrier concentration increases. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 12 )