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Silicon MOSFET distributed amplifier

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4 Author(s)
Sullivan, P.J. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; Xavier, B.A. ; Costa, D. ; Ku, W.H.

The first reported integrated silicon MOSFET distributed amplifier is presented. A three stage distributed amplifier was fabricated on a standard 0.8 μm silicon CMOS foundry process and packaged in a SSO-24 plastic surface mount package. The required inductance needed for distributed amplification is realised by the parasitic inductance of the bond wires and lead frame inductance inside the plastic surface mount package. The distributed amplifier has a unity gain cutoff frequency of 4.7 GHz, a gain of 5 dB and an input referred third order intercept point of +15 dBm

Published in:

Electronics Letters  (Volume:32 ,  Issue: 12 )