By Topic

Effect of Fe doping on high field magnetoresistance and low field magnetoresistance at zero field in polycrystalline La0.7Sr0.3Mn1-xFexO3 (x=0–0.12) thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Huang, Q. ; Center for Superconducting and Magnetic Materials and Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260 ; Li, Z.W. ; Li, J. ; Ong, C.K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1358344 

Polycrystalline La0.7Sr0.3Mn1-xFexO3 thin films, with x=0–0.12, have been prepared on (001)-Si substrates using pulsed laser deposition. The films consist of fine grains with an average size of 60–80 nm. For those films, the metal–insulator transition temperature, Tp, is much lower than the Curie temperature, TC. The high field magnetoresistance, HFMR, is nearly temperature independent for x≪0.08, whereas the extrapolated low field magnetoresistance at zero field, LFMR*, decreases rapidly with increasing temperature. Moreover, Fe doping significantly decreases LFMR* and enhances HFMR at low temperatures. We propose that for the Fe-doped films, both the reduced spin polarization of conduction electrons and the increased spin-flip scattering are responsible for the decrease of LFMR*, while the weakened ferromagnetic spin interaction at the grain boundaries is responsible for the enhanced HFMR. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 11 )