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Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN

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8 Author(s)
Wang, Dong-Feng ; Electrical Engineering Department, Howard University, 2300 Sixth St. NW, Washington, DC 20059 ; Shiwei, Feng ; Lu, C. ; Motayed, Abhishek
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1350617 

A metallization scheme has been developed for obtaining low ohmic contacts to n-GaN with a low contact resistance. The metal contact is a Ti/Al/Ti/Au composite with layers that are respectively 30, 100, 30, and 30 nm thick. Contacts with a specific contact resistivity ρs, as low as 6.0×10-7 Ω cm2 for a doping level of 1.40×1020cm-3 were obtained after annealing the sample for 30 s at 750 °C in a rapid thermal annealer. The Ti placed on top of the traditional Ti/Al contact appears to have the advantage of tying up the excess Al; therefore it does not form a mottled contact. Some of the additional Ti–Al intermetallic alloys that are formed also have beneficial effects. The Ti–Au layer forms a robust upper portion of the composite, which enables the contacts to have high-temperature applications. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 11 )

Date of Publication:

Jun 2001

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