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X-ray diffraction investigation of n-type porous silicon

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2 Author(s)
Chamard, V. ; Laboratoire de Spectrométrie Physique (CNRS UMR 5588), Université J. Fourier-Grenoble I, BP 87, 38402 St. Martin d’Hères Cedex, France ; Dolino, G.

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High resolution x-ray diffraction has been used to study the effect of doping level and illumination on the formation of n-type porous silicon. For highly doped n+-type porous layers prepared in darkness, an unusual increase of the lattice mismatch with the formation time is observed. When the samples are prepared under illumination, a degradation of the crystal quality, increasing with a decrease of the material doping level, is observed. The possible origins of these effects are discussed. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 1 )