The substitutional site of the implanted Ga impurity in (11¯00)-oriented 6H-SiC has been investigated using the preferential scattering effect of He ions. The Si and C monoatomic strings are preferentially observed by the angular scans across <11¯00> axial channels parallel to (112¯0) plane. Ga ions are implanted at an energy of 400 keV to a dose of 5×1015/cm2 through 200-nm-thick SiO2 at room temperature. In the samples annealed at 1200 °C for 30 min, the implanted Ga impurities in SiC are located preferentially on the Si sublattice sites rather than on the C sublattice sites in 6H-SiC. © 2001 American Institute of Physics.