Cart (Loading....) | Create Account
Close category search window
 

Preferential ion scattering from 6H-SiC: Identification of the substitutional site of the implanted Ga impurities

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Satoh, M. ; Research Center of Ion Beam Technology and College of Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan ; Nakaike, Y. ; Kuriyama, K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1330241 

The substitutional site of the implanted Ga impurity in (11¯00)-oriented 6H-SiC has been investigated using the preferential scattering effect of He ions. The Si and C monoatomic strings are preferentially observed by the angular scans across <11¯00> axial channels parallel to (112¯0) plane. Ga ions are implanted at an energy of 400 keV to a dose of 5×1015/cm2 through 200-nm-thick SiO2 at room temperature. In the samples annealed at 1200 °C for 30 min, the implanted Ga impurities in SiC are located preferentially on the Si sublattice sites rather than on the C sublattice sites in 6H-SiC. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 1 )

Date of Publication:

Jan 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.