By Topic

Optical constants and ellipsometric thickness determination of strained Si1-xGex:C layers on Si (100) and related heterostructures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Zollner, S. ; Motorola Semiconductor Products Sector, MD M360, 2200 West Broadway Road, Mesa, Arizona 85202 ; Hildreth, J. ; Ran Liu ; Zaumseil, P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1308070 

The complex dielectric functions Є(ω) from 0.75 to 6.6 eV of pseudomorphically strained Si1-xGex (0≪x≪0.275) and Si1-x-yGexCy (x≈0.21, 0≪y≪0.013) alloys grown on Si (001) were determined using spectroscopic ellipsometry. Our rotating-analyzer instrument uses a computer-controlled MgF2 Berek waveplate as a compensator to improve the accuracy of the ellipsometric angles, particularly below 3 eV. By performing a least-squares analysis of the raw data, taken at three angles of incidence, we obtain the thicknesses of the alloy and the native oxide cap as well as Є(ω) for the alloy, which is parametrized using a semiempirical oscillator model. Differences between our data and those in the literature are due to differences in strain conditions and/or the improved accuracy of our instrument employing a compensator, which allows the determination of the native oxide thickness from measurements at long wavelengths. We apply our dielectric functions to analyze a variety of group-IV heterostructures and find good agreement with high-resolution x-ray diffractometry. The optical constants reported here are important, because they allow thickness and composition measurements using automated inline spectroscopic ellipsometers and reflectometers. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:88 ,  Issue: 7 )