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Raman scattering study of GaAs crystalline layers grown by molecular beam epitaxy at low temperature

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5 Author(s)
Sano, H. ; School of Materials Science, Japan Advanced Institute of Science and Technology, Tatsunokuchi, Ishikawa 923-1292, Japan ; Suda, A. ; Hatanaka, T. ; Mizutani, G.
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Raman scattering, x-ray diffraction, and transmission electron microscopy (TEM) were used to study GaAs layers grown by molecular beam epitaxy at low substrate temperatures (LT-GaAs). The intensity of forbidden Raman scattering of longitudinal optical and transverse optical phonons linearly increases as a function of the concentration of excess As in the range of [AsGa]=0.04×1020–1.175×1020cm-3. Concentrations of excess As in LT-GaAs layers were estimated from the lattice spacings measured with an x-ray diffractometer. No obvious defect was seen in cross-sectional TEM images of these nonstoichiometric As-rich GaAs layers. The origin of the forbidden Raman scattering of the nonstoichiometric LT-GaAs layers is explained as the strain induced by AsGa (As antisite)-related defects with low structural symmetry. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:88 ,  Issue: 7 )

Date of Publication:

Oct 2000

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