Cart (Loading....) | Create Account
Close category search window
 

Microstructural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on InP (100) substrates for applications as gas sensor devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kim, T.W. ; Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea ; Lee, D.U. ; Yoon, Y.S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1288021 

SnO2 thin films were grown on p-InP (100) substrates by using radio-frequency magnetron sputtering at low temperature. Transmission electron microscopy (TEM) and electron diffraction pattern measurements showed that these SnO2 thin films were nanocrystalline. The capacitance–voltage measurements at room temperature showed that the type and the carrier concentration of the nominally undoped SnO2 film were n type and approximately 1.62×1016cm-3, respectively. Raman scattering measurements showed that the grain sizes of the nanocrystalline films were below 10 nm, which was in reasonable agreement with the result obtained from the high-resolution TEM measurements. Photoluminescence measurements showed a broad peak below the band-to-band emission. These results can help improve the understanding of SnO2 nanocrystalline films grown on p-InP (100) substrates for applications in high-sensitivity gas sensors. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:88 ,  Issue: 6 )

Date of Publication:

Sep 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.