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Magnetic resonance investigations of defects in Ga14N and Ga15N

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6 Author(s)
Bayerl, M.W. ; Walter Schottky Institut, Technische Universität München, Am Coulombwall, D-85748 Garching, Germany ; Reinacher, N.M. ; Angerer, H. ; Ambacher, O.
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The influence of the nitrogen nuclear spin on the optically detected magnetic resonance and electron spin resonance signatures of the intrinsic shallow donor and a deep defect causing the characteristic yellow luminescence have been studied on wurtzite GaN epitaxial layers grown by plasma induced molecular beam epitaxy with isotopically pure 14N and 15N. In particular, the linewidth of the deep defect signal is observed to be independent of the nitrogen isotope. The missing effect of the different nuclear spin properties of the 14N and 15N isotopes is discussed in view of current microscopic models for the yellow luminescence in GaN. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:88 ,  Issue: 6 )

Date of Publication:

Sep 2000

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