Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias

We have observed that stress-induced leakage currents (SILC) in thin gate oxides (4.5 nm) could be reduced by applying a low gate bias to the oxides after stress, regardless of the polarity of the applied gate bias. The reduction of SILC increased with the applied gate bias and began to saturate after 10⁵ s. In addition, the reduction of SILC was significantly enhanced in a hydrogen ambient, suggesting a strong link between the reduction of SILC and trapped-hole annealing. © 2000 American Institute of Physics.