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Shot-noise suppression in Schottky barrier diodes

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3 Author(s)
Gomila, G. ; Dipartimento di Ingegneria dell’ Innovazione e Istituto Nazionale di Fisica della Materia, Universitá di Lecce, V. Arnesano s/n, 73100 Lecce, Italy ; Reggiani, L. ; Rubı , J.M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1288219 

We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes the effects of the Coulomb interaction negligible on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the crossover between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot noise. Similar ideas can be used to interpret the noise properties of other semiconductor devices. © 2000 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:88 ,  Issue: 5 )

Date of Publication: Sep 2000

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