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Preparation of n-type conductive transparent thin films of AgInO2:Sn with delafossite-type structure by pulsed laser deposition

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5 Author(s)
Ibuki, Shuntaro ; Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan ; Yanagi, Hiroshi ; Ueda, Kazushige ; Kawazoe, Hiroshi
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Sn-doped AgInO2 thin films were prepared on α-Al2O3(0001) single-crystal substrates by pulsed laser deposition. The films prepared under optimized conditions have high optical transmittance up to the near-ultraviolet region and high electrical conductivity. The optical band gap was estimated to be ∼4.1 eV, and electrical conductivity was 7.3×101 Scm-1 at 300 K. The carrier concentration and Hall mobility at 300 K were 3.3×1020 cm-3 and 1.4 cm2V-1s-1, respectively. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:88 ,  Issue: 5 )