Cart (Loading....) | Create Account
Close category search window

Characterization of defects in (ZnMg)Se compounds by positron annihilation and photoluminescence

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Plazaola, F. ; Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland ; Saarinen, K. ; Dobrzynski, L. ; Reniewicz, H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Defect characterization of as-grown Zn1-xMgxSe mixed crystals (0≤x≪0.6) and the effect of Zn vapor annealing has been studied by positron lifetime and photoluminescence measurements. We obtain both experimental and theoretical evidence that the bulk lifetime of free positrons increases linearly with Mg alloying. The average positron lifetime increases with temperature indicating that both vacancies and negative ions trap positrons. The decompositions of the lifetime spectra show that the vacancy has the characteristic positron lifetime of 325 ps. The comparison with theoretical calculations indicate that the lifetime 325 ps corresponds either to divacancies relaxed inwards or to monovacancies strongly relaxed outwards. We consider the latter identification more likely and attribute the positron lifetime 325 ps to Zn vacancy or a complex involving VZn. The vacancy concentration is almost independent of Mg content above x=0.2 but decreases strongly at x=0.56. The Zn vapor annealing decreases the concentration of Zn vacancies. The intensity of the green photoluminescence correlates with the concentration of VZn both as a function of Mg alloying and Zn vapor annealing. We thus conclude that the electron levels of the Zn vacancy are involved in the optical transition leading to the green photoluminescence. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:88 ,  Issue: 3 )

Date of Publication:

Aug 2000

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.