By Topic

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Wong-Leung, J. ; Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, Australia ; Fatima, S. ; Jagadish, C. ; Fitz Gerald, J.D.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.373819 

Extended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800 °C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similar damage distribution were compared. The mass of the implanted ion influences the type of defect observed. For all three implant species, rod-like {311} planar defects were observed. Additionally, in Ge and Sn implanted samples, small {111} interstitial faulted dislocation loops were observed. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:88 ,  Issue: 3 )