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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:88 Issue:3 Help

Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy

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4 Author(s)
Russell, J.J. ; Microstructural Analysis Unit, University of Technology, Sydney, New South Wales 2007, Australia ; Zou, J. ; Moon, A.R. ; Cockayne, D.J.H.

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Threading dislocation glide relieves strain in strained-layer heterostructures by increasing the total length of interface misfit dislocations. The blocking theory proposed by Freund [J. Appl. Phys. 68, 2073 (1990)] predicts the thickness above which gliding threading dislocations are able to overcome the resistance force produced by existing orthogonal misfit dislocations. A set of wedge-shaped samples of InxGa1-xAs/GaAs (x=0.04) strained-layer heterostructures was grown using molecular-beam epitaxy in order to test the theory of dislocation blocking over a range of thicknesses within one sample. Scanning cathodoluminescence microscopy techniques were used to image the misfit dislocations. The cathodoluminescence results confirm the model proposed by Freund. © 2000 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:88 ,  Issue: 3 )

Date of Publication: Aug 2000

Page(s):
1307 - 1311
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.373818
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Aug 2000

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