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Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers

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9 Author(s)
Dong, J.W. ; Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 ; Chen, L.C. ; Xie, J.Q. ; Muller, T.A.R.
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Heusler alloy Ni2MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni2MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 Å and c=6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni2MnGa to have an in-plane easy axis and a Curie temperature ∼350 K. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:88 ,  Issue: 12 )