By Topic

Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal–oxide–semiconductor devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Evangelou, E.K. ; Department of Physics, University of Ioannina, P.O. Box 1186, 45110 Ioannina, Greece ; Konofaos, N. ; Aslanoglou, X.A. ; Dimitriadis, C.A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Titanium nitride (TiN) thin films were deposited by dc magnetron sputtering on SiO2/n-Si substrates in order to study their use as gate electrodes in metal–oxide–semiconductor (MOS) devices. Rutherford backscattering spectroscopy was used to determine the composition of the films and the results were correlated to those obtained by electrical measurements of the constructed MOS devices. Oxygen contamination of the TiN layers was observed, with percentage and spatial variations depending on the various deposition parameters such as the deposition temperature and the substrate bias. The best electrical performance was achieved for devices where the exposed TiN surface had low oxygen contamination. From these samples, the TiNx–Si barrier height was calculated to be equal to 0.52 eV. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:88 ,  Issue: 12 )