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We have carried out the time, temperature, and illumination dependencies of the current density in a semi-insulating GaAs sample grown at 300 °C under strong electric field. Standard ohmic behavior was observed at room temperature. A negative differential behavior as a function of the applied electric field was observed by lowering the temperature and increasing the photon flux, and this phenomenon was associated to the field-enhanced trapping effect. We have fit our data with a model for enhanced capture by a multiple-phonon emission capture process assisted by the applied electrical field. © 2000 American Institute of Physics.
Published in:
Journal of Applied Physics
(Volume:88
,
Issue:
11
)
Date of Publication: Dec 2000
- Page(s):
- 6541 - 6544
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.1314899
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Dec 2000
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