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Field-enhanced trapping in deep levels by multiple phonon emission in semi-insulating GaAs

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6 Author(s)
Rubinger, R.M. ; Departamento de Fı´sica, Instituto de Ciências Exatas, Universidade Federal de Minas Gerais, C.P. 702, 30123-970, Belo Horizonte, Brazil ; de Oliveira, A.G. ; Ribeiro, G.M. ; Bezerra, J.C.
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We have carried out the time, temperature, and illumination dependencies of the current density in a semi-insulating GaAs sample grown at 300 °C under strong electric field. Standard ohmic behavior was observed at room temperature. A negative differential behavior as a function of the applied electric field was observed by lowering the temperature and increasing the photon flux, and this phenomenon was associated to the field-enhanced trapping effect. We have fit our data with a model for enhanced capture by a multiple-phonon emission capture process assisted by the applied electrical field. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:88 ,  Issue: 11 )