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Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam

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6 Author(s)
Lebedev, A.A. ; A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russia ; Veinger, A.I. ; Davydov, D.V. ; Kozlovski, V.V.
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Deep centers in n-type 4H–SiC and 6H–SiC irradiated with 8 MeV protons have been investigated by capacitance spectroscopy and electron paramagnetic resonance (EPR). Samples were fabricated by sublimation epitaxy or commercially produced by CREE Inc. Research Triangle Park, NC. It is showed that irradiation of wide-band gap semiconductors may lead to an increase in the concentration of uncompensated donors in an n-type material. The spectrum of deep centers in both SiC polytypes is independent of the technology of material growth or type of charged particles. However, the parameters and behavior of the radiation defects in 6H– and 4H–SiC are different. A conclusion about the possible nature of the irradiation induced centers is made on the basis of annealing behavior and EPR data. The obtained results show that proton irradiation can be used in SiC device fabrication technology for producing local high-resistance regions in the semiconductor. © 2000 American Institute of Physics.

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Journal of Applied Physics  (Volume:88 ,  Issue: 11 )