By Topic

Room temperature luminescence from (Si/SiO2)n (n=1,2,3) multilayers grown in an industrial low-pressure chemical vapor deposition reactor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Pucker, G. ; INFM and Dipartimento di Fisica, via Sommarive 14, 38050 Povo-Trento, Italy ; Bellutti, P. ; Spinella, C. ; Gatterer, K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A simple complementary metal–oxide–semiconductor compatible process for the preparation of very thin (1–5 nm thick) poly-Si layers embedded in SiO2 is presented. The process consists of repeated cycles of poly-Si deposition, oxidation, and wet etching steps. Periodic structures with up to three Si/SiO2 layers were grown using this process. Transmission electron microscopy analyses show that the layered structure can be conserved down to a Si layer thickness of 2 nm. For thinner layers the resulting structure is more granular like. Samples with a Si-layer thickness lower than 3 nm show room temperature photoluminescence at about 1.55 eV that shifts to higher energies when the thickness is further reduced. The maximum shift obtained with respect to the c-Si band gap is 0.55 eV. Intensity of the photoluminescence as a function of temperature shows a behavior similar to the one observed for 0 and one-dimensional Si structures. On the basis of the thickness dependence, the temperature dependence and the saturation studies, this emission is attributed to recombination of electron–hole pairs in quantum confined Si. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:88 ,  Issue: 10 )