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Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy

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Using cross-section transmission electron microscopy and grazing incidence x-ray diffraction measurements, this work investigates the defect reduction in a wurtize GaN thin film with a multiple composite layer grown by atmospheric-pressure organometallic vapor phase epitaxy on sapphire substrate. According to those results, the sequential composite layer can terminate most threading dislocations and only a few dislocations can be deeply propagated into the next epitaxial layer. Moreover, the multiple composite layer structure significantly reduces the density of threading dislocation generated from the GaN/Al2O3 interface. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:87 ,  Issue: 9 )

Date of Publication:

May 2000

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