By Topic

Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Vennegues, P. ; Centre de Recherche sur l’Hétéroépitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue Bernard Grégory, Parc Sophia Antipolis, 06560 Valbonne, France ; Beaumont, B. ; Bousquet, V. ; Vaille, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.373048 

A transmission electron microscopy study of the reduction mechanisms for defect densities in epitaxial lateral overgrown (ELO) GaN films is presented. In the standard one step ELO, the propagation of defects under the mask is blocked, whereas the defects in the window regions thread up to the surface. We propose an alternative two step ELO method. In a first step, dislocations close to the edge of the (0001) top facet bend at 90°, thereby producing a drastic reduction in the density of defects above the window. After the coalescence, induced by lateral growth in a second step, dislocations are mainly observed in the coalescence boundaries. The density of defects is decreased to 2×10-7cm-2 over the entire surface and areas nearly 5 μm wide with 5×106cm-2 dislocations between the center of the windows and the coalescence boundaries are obtained. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:87 ,  Issue: 9 )