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Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

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5 Author(s)
Vennegues, P. ; Centre de Recherche sur l’Hétéroépitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue Bernard Grégory, Parc Sophia Antipolis, 06560 Valbonne, France ; Beaumont, B. ; Bousquet, V. ; Vaille, M.
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A transmission electron microscopy study of the reduction mechanisms for defect densities in epitaxial lateral overgrown (ELO) GaN films is presented. In the standard one step ELO, the propagation of defects under the mask is blocked, whereas the defects in the window regions thread up to the surface. We propose an alternative two step ELO method. In a first step, dislocations close to the edge of the (0001) top facet bend at 90°, thereby producing a drastic reduction in the density of defects above the window. After the coalescence, induced by lateral growth in a second step, dislocations are mainly observed in the coalescence boundaries. The density of defects is decreased to 2×10-7cm-2 over the entire surface and areas nearly 5 μm wide with 5×106cm-2 dislocations between the center of the windows and the coalescence boundaries are obtained. © 2000 American Institute of Physics.

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Journal of Applied Physics  (Volume:87 ,  Issue: 9 )