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Quantification of the low temperature infrared vibrational modes from interstitial oxygen in silicon

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2 Author(s)
De Gryse, O. ; Vakgroep Vaste-Stofwetenschappen, Universiteit Gent, Krijslaan 281, B-9000 Gent, Belgium ; Clauws, P.

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Accurate conversion factors are obtained to determine the concentration of interstitial oxygen in silicon from the low temperature local vibrational mode absorption at 1136, 1128 and 1205 cm-1 for different resolutions and apodization functions. The absorption spectra at 6 K were fitted with fit functions in order to extract the amplitudes of interest in an accurate and reproducible manner. The ratio of the amplitude at room temperature to the low temperature amplitude then gives the conversion factors for 6 K. Based on a phonon model [H. Yamada-Kaneta Materials Science Forum, edited by G. Davies and M. H. Hazare (Trans Tech, Aveiro, 1997), 258–263, p. 355] and on occupation statistics the use of the conversion factors is extended to temperatures as high as 100 K, taking into account the broadening of the absorption peaks and the variation in the occupation of the different excited states. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:87 ,  Issue: 7 )