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Nonprobe radio-frequency plasma diagnostics method based on the power balance in an asymmetric capacitively coupled discharge

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2 Author(s)
Mateev, Emil ; SILWAY Semiconductors Ltd., BG–1184 Sofia, Bulgaria ; Zhelyazkov, Ivan

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.372334 

An analytical semiquantitative theoretical model founded on the self-bias voltage dependence on the absorbed radio-frequency (rf) power of a strongly asymmetric capacitively coupled rf discharge has been developed. The model is applicable under gas-discharge conditions typical of technological etching devices and suggests an experimental method for determining basic plasma parameters, more specifically the ion flux onto the powered electrode, without using any additional probes. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:87 ,  Issue: 7 )

Date of Publication:

Apr 2000

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