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Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1-x/GayIn1-yP multilayers on InP(001)

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8 Author(s)
Beaudoin, M. ; MBE Optoelectronics Group, Center for Solid State Electronics Research, Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206 ; Desjardins, P. ; Aıt-Ouali, A. ; Brebner, J.L.
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The low temperature optical absorption spectra of fully coherent strain-compensated InAsxP1-x/GayIn1-yP (0.15≤x≤0.27; 0.09≤y≤0.13) multilayers grown on InP(001) by organometallic vapor phase epitaxy were measured using a Fourier transform infrared interferometer. All spectra show well-resolved excitonic transitions. The analysis with a solution to the Schrödinger equation in the envelope function formalism using the Bastard–Marzin model allows to determine accurately that the strained conduction band offset δEc equals (776±4)x meV, or 77%±2% of the total strained band gap difference. The heterojunction alignment is of type I for both heavy- and light-hole bands but the light-hole confinement is very shallow. The heavy- and light-hole exciton binding energies obtained from the analysis are ≃9 and 6–7 meV, respectively. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:87 ,  Issue: 5 )