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Voltage shift phenomena introduced by reverse-bias application in multilayer organic light emitting diodes

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2 Author(s)
Zou, Dechun ; Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816, Japan ; Tsutsui, Tetsuo

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.372119 

The effects of reverse-bias on the current–voltage (I–V) and luminance–voltage (L–V) properties of organic light-emitting diodes (OLEDs) were systematically measured. Shifts toward lower voltage both in I–V and L–V curves were observed for the OLEDs treated by reverse-bias application. The voltage-shift phenomena were discussed based on the effective drive voltage change induced by reverse bias application and the voltage-shift process was analyzed by using a relaxation model. Good consistency between experimental results and model calculations was obtained. It was found that the voltage shift process has several time constants. For example, three time constants (t01=17.9 s, t02=507 s, t03=7169 s) exist in the voltage shift process for ITO/TPD/Alq3/Mg:Ag diodes. The voltage shifts are assumed to be closely related to the movement of ionic impurities and rotations of permanent dipoles in organic layers. © 2000 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:87 ,  Issue: 4 )

Date of Publication: Feb 2000

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