By Topic

The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lin, Yung-Bin ; Department of Electrical Engineering, Tsing Hua University, Hsinchu, Taiwan, Republic of China ; Lee, Joseph Ya‐min

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.372100 

The temperature dependence of the current–voltage characteristics of Ba0.5Sr0.5TiO3 (BST) thin-film capacitors was studied from 300 to 433 K. An Au/BST/Pt/Ti/SiO2/Si structure was used. The BST films were deposited by rf magnetron sputtering. The conduction current was dominated by Schottky emission at room temperature and by Poole–Frenkel emission above 403 K. The dominant conduction mechanism changed from Schottky emission to Poole–Frenkel emission in the temperature range from 373 to 403 K. The BST/Pt and the BST/Au Schottky barrier heights were found to be 0.88 and 0.72 eV, respectively. The trap energy level in BST was 0.83 eV. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:87 ,  Issue: 4 )