IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Journal of Applied Physics ...> Volume:87 Issue:4 Help

The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lin, Yung-Bin ; Department of Electrical Engineering, Tsing Hua University, Hsinchu, Taiwan, Republic of China ; Lee, Joseph Ya‐min

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.372100 

The temperature dependence of the current–voltage characteristics of Ba0.5Sr0.5TiO3 (BST) thin-film capacitors was studied from 300 to 433 K. An Au/BST/Pt/Ti/SiO2/Si structure was used. The BST films were deposited by rf magnetron sputtering. The conduction current was dominated by Schottky emission at room temperature and by Poole–Frenkel emission above 403 K. The dominant conduction mechanism changed from Schottky emission to Poole–Frenkel emission in the temperature range from 373 to 403 K. The BST/Pt and the BST/Au Schottky barrier heights were found to be 0.88 and 0.72 eV, respectively. The trap energy level in BST was 0.83 eV. © 2000 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:87 ,  Issue: 4 )

Date of Publication: Feb 2000

Page(s):
1841 - 1843
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.372100
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Feb 2000

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.