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Comparison study of nucleation and growth characteristics of chemical-vapor-deposited diamond films on CoSi2 (001) and Si(001)

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4 Author(s)
Gu, C.Z. ; Fraunhofer-Institut für Schicht- und Oberflächentechnik, Bienroder Weg 54E, 38108 Braunschweig, Germany ; Jiang, X. ; Kappius, L. ; Mantl, S.

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Epitaxial CoSi2 (001) layers, deposited on Si(001) substrates by molecular beam allotaxy, were used as substrates for diamond deposition in order to realize applications. The nucleation and textured growth of diamond films were compared with those on the Si(001) substrates. The results indicate that in a microwave-plasma chamber diamond can be nucleated with a higher density on CoSi2 at lower temperatures using a bias-enhanced method. High-quality [001]-textured diamond films can be synthesized on CoSi2 (001) using the [001]-textured growth conditions. So far, epitaxial growth of diamond on CoSi2 cannot be observed. Statistically, a rotating angle distribution of diamond grains around the [001] axis in a [001]-textured film shows, however, preferred in-plane orientations of 13°, 22°, 45°, and 77° relative to the CoSi2 [011] axis. The structural and chemical analyses show that no Co and Si element diffusion from the CoSi2 substrate into the diamond film can be detected. The films grown on CoSi2 have similar crystal quality to that of epitaxial films deposited directly on Si. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:87 ,  Issue: 4 )