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Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact

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4 Author(s)
Gourmelon, E. ; E P S E, Equipe Couches Minces et Matériaux Nouveaux, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208, 44322 Nantes Cédex 3, France ; Bernede, J.C. ; Pouzet, J. ; Marsillac, S.

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Textured films of molybdenum disulfide have been obtained by solid state reaction between the constituents in thin films form when a (200) oriented tungsten sheet is used as substrate. The crystallites have their c axis perpendicular to the plane of the substrate. The annealing conditions are T=1073 K and t=30 min. The films are stoichoimetric and p type. Such highly textured films are achieved without foreign atom addition (Ni, Co…). It appears, as shown by x-ray photoelectron spectroscopy, that a thin WS2 layer is present at the interface W/MoS2. The crystallization process is discussed by a van der Waals texturation (pseudoepitaxy) onto dangling bond sulfur terminated surfaces, these surfaces being ordered. After characterization of the W/MoS2 structure by x-ray diffraction and x-ray photoelectron spectroscopy, an upper electrode of tungsten was deposited by sputtering. The electrical properties of these W/MoS2/W structures have been investigated by analyzing the behavior of the current–voltage characteristics as a function of the measuring temperature. It is shown that an ohmic contact is obtained with a contact resistance smaller than the resistance of the MoS2 film. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:87 ,  Issue: 3 )

Date of Publication:

Feb 2000

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