By Topic

Ultrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC:H/i-a-Si:H interface of amorphous silicon solar cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Lee, Chang Hyun ; Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea ; Jeon, Jin Wan ; Koeng Su Lim

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.373610 

The properties of thin p-type microcrystalline silicon (p-μc-Si:H) films prepared onto boron-doped amorphous silicon carbide (p-a-SiC:H) have been investigated. At the initial growth regime (≪100 Å) of the p-μc-Si:H onto p-a-SiC:H, Si nanocrystallites were proved to be formed in amorphous matrix. The thin p-μc-Si:H was introduced as a novel constant band gap buffer at the p/i interface of amorphous silicon solar cells. The open circuit voltage and the blue response of the cell were improved significantly by inserting the p-μc-Si:H at the p/i interface as a buffer when compared with those of the bufferless cell. Our numerical modeling on the constant band gap buffer elucidates clearly that the buffering effects of the thin p-μc-Si:H originate from the shrinkage of highly defective region with a short lifetime in the vicinity of the p/i interface. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:87 ,  Issue: 12 )