The fatigue properties of (Pb0.6Sr0.4)TiO3 (PSrTO) thin films deposited using (La0.5Sr0.5)MnO3 (LSMO) materials as buffer layer were compared with those of the films grown using (La0.5Sr0.5)CoO3 (LSCO) materials as buffer layer. The extent of degradation induced by polarization switching for 1×1010 cycles with 210 kV/cm maximum field, which is four times of coercive field (Ec), is less pronounced for PSrTO/LSMO/Pt(Si) thin films than that for PSrTO/LSCO/Pt(Si) films. This phenomenon is ascribed to the smaller strain induced in PSrTO/LSMO/Pt(Si) materials. Moreover, the pulse response testing indicates that the degradation of the films mainly occurs at PSrTO-to-LSMO (or PSrTO-to-LSCO) interface. © 2000 American Institute of Physics.