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Mathematical modeling of thermal runaway in semiconductor laser operation

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1 Author(s)
Smith, W.R. ; Department of Mathematics and Computing Science, Technische Universiteit Eindhoven, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.373538 

A mathematical model describing the coupling of electrical, optical and thermal effects in semiconductor lasers is introduced. Through a systematic asymptotic expansion, the governing system of differential equations is reduced to a single second-order boundary value problem. This highly nonlinear equation describes the time-independent maximum temperature in the boundary layer adjacent to the mirror facet. The solution of the problem is a multi-valued function of current. The graph of the maximum steady-state temperature as a function of current gives a fold-shaped response curve, which indicates that no bounded steady state exists beyond a critical value of current. For certain device parameters and initial conditions, thermal runaway occurs. A mechanism for the sudden mode of semiconductor laser failure is described in terms of thermal runaway. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:87 ,  Issue: 12 )