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Spectroscopic ellipsometry of epitaxial ZnO layer on sapphire substrate

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7 Author(s)
Postava, K. ; Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu 432-8011, Japan ; Sueki, H. ; Aoyama, M. ; Yamaguchi, T.
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Optical properties of epitaxial ZnO layers have been studied in the spectral region from 1.5 to 5.4 eV using four-zone null spectroscopic ellipsometry. An existing model dielectric function based on excitonic structure near direct band gap has been improved by including a high-energy absorption term. Surface layer, corresponding to the surface roughness, was found to be essential to fit the spectroellipsometric data obtained. Two kinds of samples have been studied: ZnO layers prepared on (0001) and (112¯0)-oriented sapphire substrates. The surfaces of the first ones were found to be more rough. © 2000 American Institute of Physics.

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Journal of Applied Physics  (Volume:87 ,  Issue: 11 )