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Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy

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6 Author(s)
Li, L.H. ; National Research Center for Optoelectronic Technology and the State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People’s Republic of China ; Pan, Z. ; Zhang, W. ; Lin, Y.W.
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The effect of rapid thermal annealing (RTA) on the optical properties of GaNxAs1-x/GaAs strained single quantum well (SQW) was studied by low-temperature photoluminescence (PL). The GaNxAs1-x/GaAs SQW structures were prepared by dc active nitrogen plasma assisted molecular beam epitaxy. PL measurements on a series of samples with different well widths and nitrogen compositions were used to evaluate the effects of RTA. The annealing temperature and time were varied from 650 to 850 °C and 30 s to 15 min, respectively. Remarkable improvements of the optical properties of the samples were observed after RTA under optimum conditions. The interdiffusion constants have been calculated by taking into account error function diffusion and solving the Schrodinger equation. The estimated interdiffusion constants D are 10-17–10-16 cm2/s for the earlier annealing conditions. Activation energies of 6–7 eV are obtained by fitting the temperature dependence of the interdiffusion constants. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:87 ,  Issue: 1 )

Date of Publication:

Jan 2000

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