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Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor deposition

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12 Author(s)
Choi, W.K. ; Microelectronics Laboratory, Department of Electrical Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 ; Chen, J.H. ; Bera, L.K. ; Feng, W.
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The structural properties of as-grown and rapid thermal oxidized Si1-x-yGexCy epitaxial layers have been examined using a combination of infrared, x-ray photoelectron, x-ray diffraction, secondary ion mass spectroscopy, and Raman spectroscopy techniques. Carbon incorporation into the Si1-x-yGexCy system can lead to compressive or tensile strain in the film. The structural properties of the oxidized Si1-x-yGexCy film depend on the type of strain (i.e., carbon concentration) of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content so that the oxidized films closely resemble to Si1-xGex films. For tensile films, two broad regions, one with carbon content higher and the other lower than that required for full strain compensation, coexist in the oxidized films. © 2000 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:87 ,  Issue: 1 )

Date of Publication:

Jan 2000

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