A homogeneous SiC-surface layer is formed by implantation of 40 keV 13C carbon ions into single-crystalline silicon <100> with a fluence of 3.8×1017 ions/cm2 and subsequent electron beam rapid thermal annealing (EB-RTA). The carbon-depth distributions were analyzed with the resonant nuclear reaction 13C(p,γ)14N. In contrast to furnace annealing, EB-RTA (1150 °C for 15 min) leads to a carbon redistribution resulting in the formation of a homogeneous SiC-surface layer of about 50 nm in thickness. The carbon redistribution was investigated on silicon samples with an oxygen-depth marker using Rutherford backscattering spectroscopy. SiC bonds were detected by Fourier transform infrared spectroscopy measurements. © 1999 American Institute of Physics.