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Formation of SiC-surface layer by ion implantation

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3 Author(s)
Theodossiu, E. ; Institut für Kernphysik, J. W. Goethe Universität, August-Euler-Str. 6, D-60486 Frankfurt/Main, Germany ; Baumann, H. ; Bethge, K.

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A homogeneous SiC-surface layer is formed by implantation of 40 keV 13C carbon ions into single-crystalline silicon <100> with a fluence of 3.8×1017ions/cm2 and subsequent electron beam rapid thermal annealing (EB-RTA). The carbon-depth distributions were analyzed with the resonant nuclear reaction 13C(p,γ)14N. In contrast to furnace annealing, EB-RTA (1150 °C for 15 min) leads to a carbon redistribution resulting in the formation of a homogeneous SiC-surface layer of about 50 nm in thickness. The carbon redistribution was investigated on silicon samples with an oxygen-depth marker using Rutherford backscattering spectroscopy. SiC bonds were detected by Fourier transform infrared spectroscopy measurements. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:86 ,  Issue: 8 )