By Topic

The influence of boron ion implantation on hydrogen blister formation in n-type silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Hochbauer, T. ; Los Alamos National Laboratory, Los Alamos, New Mexico 87545 ; Walter, K.C. ; Schwarz, R.B. ; Nastasi, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have studied the formation of surface blisters in <100> n-type silicon following co-implantation with boron and hydrogen. The silicon substrates had four different n-type dopant levels, ranging from 1014 to 1019cm-3. These substrates were implanted with 240 keV B+ ions to a dose of 1015cm-2, followed by a rapid thermal anneal at 900 °C for 30–60 s to force the boron atoms into substitutional lattice positions (activation). The samples were then implanted with 40 keV H+ to a dose of 5×1016cm-2. The implanted H+ distribution peaks at a depth of about 475 nm, whereas the distribution in the implanted B+ is broader and peaks at about 705 nm. To evaluate the role of the B+ implantation, control samples were prepared by implanting with H+ only. Following the H+ implantation, all the samples were vacuum annealed at 390 °C for 10 min. Blisters resulting from subsurface cracking at depths of about 400 nm, were observed in most of the B+ implanted samples, but not in the samples implanted with H+ only. This study indicates that the blistering results from the coalescence of implanted H into bubbles. The doping with B faci- litates the short-range migration of the H interstitials and the formation of bubbles. A comparison of the observed crack depth with the depth of the damage peak resulting from the H+ implantation (evaluated by the computer code TRIM) suggests that the nucleation of H bubbles occurs at the regions of maximum radiation damage, and not at the regions of maximum H concentration. For given values of B+ and H+ doping, the blister density was found to decrease with increasing n-type doping, when the boron is activated. Blister formation was also observed in B+ implanted samples which had not been activated. In this case, the blister density was found to increase with increasing value of n-type doping. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:86 ,  Issue: 8 )