Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.371309
In this article we show that the behavior of new devices fabricated from horizontal Bridgman CdZnTe reported recently can be explained by the same conventional electrostatics arguments used to analyze detectors made from high pressure Bridgman material, and no qualitative differences in the material or contacts are necessary to explain the behavior of these new devices. Our work is an extension of the results obtained with a similar device geometry fabricated on high pressure Bridgman material. In addition we discuss the possibility of extending the design concepts learned here to fabricate large volume spectrometers based on a pixel array design. © 1999 American Institute of Physics.