By Topic

Low field electron mobility in GaN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Dhar, Subhabrata ; School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067, India ; Ghosh, Subhasis

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Temperature and doping dependencies of electron mobility in GaN have been calculated using an iterative technique. The following scattering mechanisms, i.e., impurity, polar optical phonon, acoustic phonon, piezoelectric, and electron plasmon are included in the calculation. Ionized impurity scattering has been treated beyond the Born approximation using a phase-shift analysis. The compensation ratio is used as a parameter with a realistic charge neutrality condition. Comparisons with experimental data confirm the present calculation over a wide range of temperatures and electron concentrations. Mobility and electron concentration data from Hall measurements reveal a degenerate layer at the GaN-substrate interface. This degenerate layer affects the bulk mobility and electron concentration and needs to be accounted for in order to extract reliable experimental values of the bulk electron mobility. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:86 ,  Issue: 5 )