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Formation, characterization, and properties of a new boron-carbon-nitrogen crystal

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3 Author(s)
Yao, B. ; Department of Physics, Jilin University, Changchun, 130023, Peoples Republic of China,State Key Lab. of RSA, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110015, Peoples Republic of ChinaInternational Center for Material Physics, Chinese Academy of Sciences, Shenyang, 110015, Peoples Republic of China ; Liu, L. ; Su, W.H.

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Amorphous boron-carbon-nitrogen (BCN) powders were produced by mechanically milling a mixture of hexagonal boron nitride (h-BN) and graphite powders for 120 h in an argon atmosphere. By annealing the amorphous BCN powders isothermally under 4 GPa at temperatures above 880 K, a new B–C–N crystal with a tetragonal structure was obtained. Its lattice constants decrease with the increasing annealing temperature and are a=1.685 nm and c=0.537 nm, respectively at an annealing temperature of 1170 K. The conductivity measurement suggests the new B–C–N phase is a semiconductor with a very small band gap and the band gap changes depending on the temperature in the temperatures between room temperature and 840 K. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:86 ,  Issue: 5 )