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Raman scattering in hexagonal GaN epitaxial layer grown on MgAl2O4 substrate

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5 Author(s)
Li, G.H. ; National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China ; Zhang, W. ; Han, H.X. ; Wang, Z.P.
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The room temperature Raman spectra of the hexagonal GaN epilayer grown on [111]- oriented MgAl2O4 substrate were measured in various backscattering and right angle scattering geometries. All of the symmetry—allowed optical phonon modes were observed except the E2 (low frequency) mode. The quasitransverse and quasilongitudinal modes were also observed in the x(zx)z and x(yy)z configurations, which are the mixed modes of pure transverse and longitudinal modes with A1 and E1 symmetry, respectively. © 1999 American Institute of Physics.

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Journal of Applied Physics  (Volume:86 ,  Issue: 4 )