By Topic

Raman scattering in hexagonal GaN epitaxial layer grown on MgAl2O4 substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Li, G.H. ; National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China ; Zhang, W. ; Han, H.X. ; Wang, Z.P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The room temperature Raman spectra of the hexagonal GaN epilayer grown on [111]- oriented MgAl2O4 substrate were measured in various backscattering and right angle scattering geometries. All of the symmetry—allowed optical phonon modes were observed except the E2 (low frequency) mode. The quasitransverse and quasilongitudinal modes were also observed in the x(zx)z and x(yy)z configurations, which are the mixed modes of pure transverse and longitudinal modes with A1 and E1 symmetry, respectively. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:86 ,  Issue: 4 )