By Topic

Deep hole traps in Be-doped Al0.5Ga0.5As layers grown by molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Szatkowski, J. ; Institute of Physics, Wrocław University of Technology, Wybrzez˙e Wyspiańskiego 27, 50-370 Wrocław, Poland ; Płaczek-Popko, E. ; Sieranski, K. ; Hansen, O.P.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.370907 

Deep hole traps in p-type Al0.5Ga0.5As grown by molecular beam epitaxy have been studied by the deep-level transient-spectroscopy method applied to samples with a Schottky diode configuration. Five hole traps, labeled as H0 to H4, were found. For traps H1, H3, and H4 the activation energies for emission were ET1=0.14 eV, ET3=0.40 eV, and ET4=0.46 eV, respectively. Hole emission from trap H2 was dependent on the external electric field. The emission rate obeyed the Poole–Frenkel relation. When extrapolated to zero electric field, the thermal activation energy for hole emission was ET2,0=0.37 eV. Capture cross sections for traps H1 and H4 were thermally activated with energy barriers EB1=0.04 eV and EB4=0.18 eV, respectively. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:86 ,  Issue: 3 )