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Atomic structural study of a Br-chemisorbed Si(111)-7×7 surface by using scanning tunneling microscopy

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2 Author(s)
Mochiji, Kozo ; Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c/o National Institute for Advanced Interdisciplinary Research (NAIR), 1-1-4 Higashi, Tsukuba, Ibaraki 305-0046, Japan ; Ichikawa, Masakazu

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The atomic structure of a Br-chemisorbed Si(111)-7×7 surface is investigated by scanning tunneling microscopy. At low coverage, Br-reacted adatoms are distinguishable from unreacted adatoms in topographic images. The bias-dependent imaging suggests that the lowest tail of the antibonding state of the Br–Si bond is located about 1.5 eV above the Fermi level. At saturation coverage, a 7×7 structure is perfectly retained at room temperature and most adatoms remain after annealing at 400–630 °C. These results indicate that additional Br atoms cannot insert themselves into the Si–Si backbond between a Br-bonded adatom and a rest atom; therefore, SiBr is the only surface species present even at saturation coverage, which is not the case for F- or Cl-saturated Si(111) surfaces. © 1999 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:86 ,  Issue: 2 )

Date of Publication: Jul 1999

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