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Analytical threshold voltage model for short channel double-gate SOI MOSFETs

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3 Author(s)
Suzuki, K. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Tosaka, Y. ; Sugii, T.

Solving a two-dimensional (2-D) Poisson equation and assuming the minimum potential determines the threshold voltage, Vth, we derived a model for Vth of short channel double-gate SOI MOSFETs, and verified its validity by comparing with numerical data. We evaluated the threshold voltage lowering, ΔVth, and subthreshold swing (S-swing) degradation with decreasing gate length L G, and showed that we can design a 0.05-μm-LG device with ΔVth of less than 50 mV and an S-swing of less than 70 mV/decade if 10-nm-thick SOI is available

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Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 7 )