Cart (Loading....) | Create Account
Close category search window

Modification of hydrogen-free amorphous carbon films by focused-ion-beam milling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Stanishevsky, A. ; University of Maryland, Institute for Plasma Research, College Park, Maryland 20742 ; Khriachtchev, L.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Amorphous hydrogen-free carbon films with various sp3/sp2 ratios were exposed to a 50 kV Ga+ focused ion beam (FIB) with a dose in the range from 1014 to 2.5×1018 ion/cm2. Atomic force microscopy (AFM), measurements of electric resistivity, and Raman spectroscopy were used to study FIB-induced modification of surface topography and film structure. The Raman spectra indicate an increase of sp2 coordination in sp3-rich films after ion irradiation and growth of sp2-bonded clusters under annealing at 550 °C. Light absorption in the FIB-exposed areas increases by a factor of up to 15 compared to the as-deposited material. For the FIB-irradiated sp3-rich films, the AFM measurements show neither significant roughening of the surface nor further modification of surface topography under annealing and over an extended period of time. The behavior of the films resistivity as a result of FIB irradiation and annealing most probably reflects the effect of gallium impurity. Also, the Raman measurements have documented slow room-temperature structural relaxation in the FIB-exposed areas of one sample. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:86 ,  Issue: 12 )

Date of Publication:

Dec 1999

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.