Cart (Loading....) | Create Account
Close category search window
 

Molecular dynamics simulation of silicon surface smoothing by low-energy argon cluster impact

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kim, Chang-Koo ; Plasma Processing Laboratory Department of Chemical Engineering, University of Houston, Houston, Texas 77204-4792 ; Kubota, Alison ; Economou, Demetre J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.371753 

The molecular dynamics simulation method was employed to study the mechanism of silicon (001) surface smoothing by impact of Ar16 or Ar40 clusters with energy at or below 20 eV per constituent atom. Smoothing of a pyramid on top of an otherwise “flat” silicon surface was used as a model system to elucidate the mechanism of cluster-substrate interaction. Surface smoothing is achieved by lateral displacement of substrate atoms during cluster impact. There exists an optimum energy of around 4–5 eV per constituent atom of the cluster for efficient surface smoothing; this implies that a proper energy is required for effective lateral displacement. Cluster size also affects surface smoothing because lateral displacement depends on the nonlinear effect of multiple collisions in the near surface region. As anticipated, damage in the substrate increases with cluster energy. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:86 ,  Issue: 12 )

Date of Publication:

Dec 1999

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.