Cart (Loading....) | Create Account
Close category search window

Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Raychaudhuri, A. ; Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada ; Deen, M.J. ; Kwan, W.S. ; King, M.I.H.

Propagation of defects from the sub-spacer region to the gate-overlapped LDD region in NMOSFETs is modeled using measurements and 2-D device simulation. It is argued that the saturation of degradation is caused by the saturating nature of this degradation length, as opposed to decreasing lateral electric field maxima (Em) or increasing barrier height (φit) to defect creation. Two stage hot-carrier degradation was observed in our LDD NMOSFETs. The early mode (1000-3000 s) of the degradation is characterized by a sharp rate of degradation of the linear transconductance (gm), and a reduction in the substrate current (IB). In order to locate and quantify defects produced in this early mode degradation phase, we use the results of a combination of the floating gate technique and simultaneous measurements of the reverse (source and drain interchanged) saturation gm's. These results help us build a 2-D simulation framework involving trapped negative charges in the oxide in the drain-side gate-edge region, partly under the gate and partly in the spacer region. We then use 2-D simulation and other measurements such as linear and saturation current degradation, IB degradation, and charge pumping to confirm the location of the defects and help estimate their quantity. Simulation results also help us build an analytical model for defect propagation from the early mode to the late mode. The analytical model is seen to explain many features of the saturating nature of hot-carrier degradation

Published in:

Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 7 )

Date of Publication:

Jul 1996

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.