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Strain characterization of polycrystalline diamond and silicon systems

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1 Author(s)
Anastassakis, E. ; Department of Physics, National Technical University, GR-15780 Athens, Greece

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The phonon deformation potentials of polycrystalline diamond and silicon, derived through the Voigt–Reuss–Hill averaging technique, are used to establish the systematics of strain characterization of polycrystalline films, considering all possible stress configurations. The results are compared to Raman data from the literature. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:86 ,  Issue: 1 )