The material properties of low-temperature plasma-grown oxide on gas-source molecular beam epitaxial Si0.84Ge0.16 have been investigated. X-ray photoelectron spectra studies show that plasma anodization leads to no segregation of Ge species during thin oxide growth with the onset of partial segregation occurring for thicker oxides. Depth profiling shows that the plasma oxide is stoichiometric in form with the exception of a small percentage of Ge atoms left in their unoxidized state. The density of these Ge atoms agrees with that measured in previous electron trapping studies. In addition, oxide growth rate enhancement of SiGe is observed. These phenomena are explained using a qualitative model for the mechanism of oxide growth of SiGe which is consistent with published results for SiGe: oxides grown with other systems. © 1999 American Institute of Physics.