Cart (Loading....) | Create Account
Close category search window
 

X-ray photoelectron spectra of low temperature plasma anodized Si0.84Ge0.16 alloy on Si(100): Implications for SiGe oxidation kinetics and oxide electrical properties

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Riley, L.S. ; Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ, Great Britain ; Hall, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.370201 

The material properties of low-temperature plasma-grown oxide on gas-source molecular beam epitaxial Si0.84Ge0.16 have been investigated. X-ray photoelectron spectra studies show that plasma anodization leads to no segregation of Ge species during thin oxide growth with the onset of partial segregation occurring for thicker oxides. Depth profiling shows that the plasma oxide is stoichiometric in form with the exception of a small percentage of Ge atoms left in their unoxidized state. The density of these Ge atoms agrees with that measured in previous electron trapping studies. In addition, oxide growth rate enhancement of SiGe is observed. These phenomena are explained using a qualitative model for the mechanism of oxide growth of SiGe which is consistent with published results for SiGe: oxides grown with other systems. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 9 )

Date of Publication:

May 1999

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.